ZDT694(1995) 查看數據表（PDF） - Diodes Incorporated.
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ZDT694 Datasheet PDF : 3 Pages
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ZDT694
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO 120
Voltage
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 120
V
IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 5
V
IE=100µA
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation VCE(sat)
Voltage
Base-Emitter
Saturation Voltage
VBE(sat)
0.1 µA
0.1 µA
0.25 V
0.5 V
0.9 V
VCB=100V
VEB=4V
IC=0.1A, IB=0.5mA*
IC=0.4A, IB=5mA*
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9 V
IC=1A, VCE=2V*
Static Forward Current
hFE
500
Transfer Ratio
400
150
Transition Frequency
fT
130
IC=100mA, VCE=2V*
IC=200mA, VCE=2V*
IC=400mA, VCE=2V*
MHz IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Cibo
200
pF
Output Capacitance
Cobo
9
pF
Switching Times
ton
toff
80
ns
2900
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
VEB=0.5V, f=1MHz
VCB=10V, f=1MHz
IC=100mA, IB1=10mA
IB2=10mA, VCC=50V
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