ZXMN2A01E6 查看數據表（PDF） - Diodes Incorporated.
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ZXMN2A01E6 Datasheet PDF : 7 Pages
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ZXMN2A01E6
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
12
V
TA = +25C (Note 6)
3.1
Continuous Drain Current
VGS = 10V TA = +70C (Note 6)
ID
2.5
A
TA = +25C (Note 5)
2.5
Pulsed Drain Current (Note 7)
IDM
11
A
Continuous Source Current (Body Diode) (Note 6)
IS
2.4
A
Pulsed Source Current (Body Diode) (Note 7)
ISM
11
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation at TA = +25C (Note 5)
Linear derating factor
Power Dissipation at TA = +25C (Note 6)
Linear Derating Factor
Junction to Ambient (Note 5)
Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
PD
RJA
RJA
TJ, TSTG
Value
1.1
8.8
1.7
13.6
113
70
-55 to +150
Unit
W
mW/C
W
mW/C
C/W
C/W
C
Notes:
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t≦10 secs.
7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10µs - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Symbol Min
Typ
V(BR)DSS
20
-
IDSS
-
-
IGSS
-
-
VGS(TH)
0.7
-
Static Drain-Source On-State Resistance (Note 8)
RDS(ON)
-
-
Forward Transconductance (Notes 8 &10)
Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 10)
Output Capacitance (Note 10)
Reverse Transfer Capacitance (Note 10)
Total Gate Charge (Notes 9 & 10)
Gate-Source Charge (Notes 9 & 10)
Gate-Drain Charge (Notes 9 & 10)
Turn-On Delay Time (Notes 9 & 10)
Turn-On Rise Time (Notes 9 & 10)
Turn-Off Delay Time (Notes 9 & 10)
Turn-Off Fall Time (Notes 9 & 10)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
gfs
-
VSD
-
Ciss
-
Coss
-
Crss
-
Qg
-
Qgs
-
Qgd
-
tD(ON)
-
tR
-
tD(OFF)
-
tF
-
tRR
-
QRR
-
Notes: 8. Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
6.1
0.9
303
59
30
3.0
0.8
1.0
2.49
5.21
7.47
4.62
23
5.65
Max
-
1
100
-
0.120
0.225
-
0.95
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V ID = 250A, VGS = 0V
A VDS = 20V, VGS = 0V
nA VGS = 12V, VDS = 0V
V
ID = 250A, VDS = VGS
Ω
VGS = 4.5V, ID =4A
VGS = 2.5V, ID =1.5A
S VDS = 10V, ID =4A
V TJ = +25°C , IS = 3.2A, VGS = 0V
pF
pF
VDS = 15V, VGS = 0V
f = 1MHz
pF
nC
nC VGS = 4.5V, VDS = 10V
nC ID = 4A
ns
ns VDD = 10V, VGS = 5V
ns ID = 4A, RG = 6.0
ns
ns TJ = +25°C, IF=4A,
nC di/dt= 100A/μs
ZXMN2A01E6
Datasheet Number: DS33512 Rev. 4 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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