HCF4010B(2001) 查看數據表（PDF） - STMicroelectronics
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HCF4010B Datasheet PDF : 8 Pages
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HCF4010B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Symbol
Parameter
Test Condition
VDD (V) VI (V) VCC (V)
tTLH Output Transition Time
5
5
5
10
10
10
15
15
15
tTHL Output Transition Time
5
5
5
10
10
10
15
15
15
tPLH Propagation Delay Time
5
5
5
10
10
10
10
10
5
15
15
15
15
15
5
tPHL Propagation Delay Time
5
5
5
10
10
10
10
10
5
15
15
15
15
15
5
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
Value (*)
Unit
Min. Typ. Max.
150 350
75 15 ns
55 110
35 70
20 40 ns
15 30
100 200
50 100
50 100 ns
35 70
35 70
65 130
35 70
30 70 ns
25 50
20 40
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
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