HCF40174BM1 查看數據表（PDF） - STMicroelectronics
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HCF40174BM1 Datasheet PDF : 9 Pages
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HCF40174B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Symbol
Parameter
VDD (V)
tPLH tPHL Propagation Delay Time :
5
Clock to Output
10
15
tPHL Propagation Delay Time :
5
Clear to Output
10
15
tTHL, tTLH Transition Time
5
10
15
tsetup Data Setup Time
5
10
15
thold Data Hold Time
5
10
15
tW Clock Input Pulse Widht
5
Low Level
10
15
tW Clear Input Pulse Widht
5
HIGH and LOW
10
15
tr, tf Clock Input Rise or Fall
5
Time
10
15
trem Clear Removal Time
5
10
15
fCL Maximum Clock Input
5
Frequency
10
15
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
Test Condition
Value (*)
Unit
Min.
40
20
10
80
40
30
130
60
40
100
50
40
0
0
0
3.5
6
8
Typ.
150
70
50
100
50
40
100
50
40
20
10
0
40
20
15
65
30
20
50
25
20
-40
-15
-10
7
12
16
Max.
300
140
100
200
100
80
200
100
80
15
15
15
ns
ns
ns
ns
ns
ns
ns
µs
ns
MHz
5/9
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