IRF9Z14S 查看數據表（PDF） - International Rectifier
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IRF9Z14S Datasheet PDF : 10 Pages
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IRF9Z14S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-60
–––
–––
-2.0
1.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
-0.06 –––
––– 0.50
––– -4.0
––– –––
––– -100
––– -500
––– -100
––– 100
––– 12
––– 3.8
––– 5.1
11 –––
63 –––
10 –––
31 –––
7.5 –––
270 –––
170 –––
31 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID =-1mA
VGS =-10V, ID = -4.0A
VDS = VGS, ID = -250µA
VDS = -25V, ID = -4.0A
VDS = -60V, VGS = 0V
VDS = -48V, VGS = 0V, TJ = 150°C
VGS = -20V
VGS = 20V
ID = -6.7A
VDS = -48V
VGS = -10V, See Fig. 6 and 13
VDD = -30V
ID = -6.7A
RG = 24Ω
RD = 4.0Ω, See Fig. 10
Between lead,
and center of die contact
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
MOSFET symbol
D
––– ––– -6.7 A showing the
integral reverse
G
––– ––– -27
p-n junction diode.
S
––– ––– -5.5 V TJ = 25°C, IS = -6.7A, VGS = 0V
––– 80 160 ns TJ = 25°C, IF = -6.7A
––– 96 190 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = -25V, starting TJ = 25°C, L = 3.6mH
RG = 25Ω, IAS = -6.7A. (See Figure 12)
ISD ≤ -6.7A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF9Z14 data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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