IRF520VL 查看數據表（PDF） - International Rectifier

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IRF520VL

HEXFET® Power MOSFET

International Rectifier 

IRF520VS/IRF520VL

100

TOP

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

100

TOP

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

 20µs PULSE WIDTH

TJ = 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

 20µs PULSE WIDTH

TJ = 175 °C

1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

 TJ = 25 °C

 TJ = 175°C

10

 V DS= 50V

20µs PULSE WIDTH

1

4.0

5.0

6.0

7.0

8.0

9.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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3.5  ID = 9.2A

3.0

2.5

2.0

1.5

1.0

0.5

 VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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