IRF7460 查看數據表（PDF） - International Rectifier

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IRF7460

SMPS MOSFET

International Rectifier 

IRF7460

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

20

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––

RDS(on)

–––

Static Drain-to-Source On-Resistance –––

VGS(th)

Gate Threshold Voltage

1.0

IDSS

Drain-to-Source Leakage Current

–––

–––

IGSS

Gate-to-Source Forward Leakage

–––

Gate-to-Source Reverse Leakage

–––

––– –––

0.089 –––

7.2 10

10.5 14

––– 3.0

––– 20

––– 100

––– 200

––– -200

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

mΩ VGS = 10V, ID = 12A „

VGS = 4.5V, ID = 9.6A „

V VDS = VGS, ID = 250µA

µA VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125°C

nA VGS = 16V

VGS = -16V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Qg

Qgs

Qgd

Qoss

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Output Gate Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

26 ––– ––– S VDS = 16V, ID = 9.6A

––– 19 –––

ID = 9.6A

––– 6.9 ––– nC VDS = 10V

––– 6.0 –––

VGS = 4.5V, „

––– 17 26

VGS = 0V, VDS = 10V

––– 11 –––

VDD = 10V

––– 6.9 ––– ns ID = 9.6A

––– 12 –––

RG = 1.8Ω

––– 4.3 –––

VGS = 4.5V „

––– 2050 –––

VGS = 0V

––– 1060 –––

VDS = 10V

––– 150 ––– pF ƒ = 1.0MHz

Avalanche Characteristics

Symbol

EAS

IAR

Parameter

Single Pulse Avalanche Energy‚

Avalanche Current

Typ.

–––

–––

Max.

240

9.6

Units

mJ

A

Diode Characteristics

Symbol

IS

ISM

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

Min.

–––

–––

–––

–––

–––

–––

–––

–––

Typ.

–––

–––

0.8

0.66

44

60

44

64

Max.

2.3

100

1.3

–––

66

90

66

96

Units

A

V

ns

nC

ns

nC

Conditions

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

TJ = 25°C, IS = 9.6A, VGS = 0V „

TJ = 125°C, IS = 9.6A, VGS = 0V „

TJ = 25°C, IF = 9.6A, VR=10V

di/dt = 100A/µs „

TJ = 125°C, IF = 9.6A, VR=10V

di/dt = 100A/µs „

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