IRF7463
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––
–––
RDS(on)
Static Drain-to-Source On-Resistance –––
–––
VGS(th)
Gate Threshold Voltage
0.6
–––
IDSS
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
IGSS
Gate-to-Source Reverse Leakage
–––
––– ––– V VGS = 0V, ID = 250µA
0.029 ––– V/°C Reference to 25°C, ID = 1mA
0.0063 0.0080 Ω
0.0074 0.0095
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 12A
0.0105 0.020
VGS = 2.8V, ID = 3.5A
––– 2.0 V VDS = VGS, ID = 250µA
––– 20 µA VDS = 24V, VGS = 0V
––– 100
VDS = 24V, VGS = 0V, TJ = 100°C
–––
200
nA
VGS = 12V
––– -200
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
31 ––– –––
––– 34 51
––– 7.5 11
––– 13 20
––– 20 –––
––– 16 –––
––– 41 –––
––– 44 –––
––– 3110 –––
––– 850 –––
––– 130 –––
S VDS = 24V, ID = 14A
ID = 14A
nC VDS = 24V
VGS = 5.0V,
VDD = 15V,
ns ID = 1.0A
RG = 6.0Ω
VGS = 4.5V
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
320
14
0.25
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.5
A showing the
integral reverse
G
––– ––– 110
p-n junction diode.
S
––– ––– 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V
––– 64 96 ns TJ = 25°C, IF = 2.5A
––– 99 150 nC di/dt = 100A/µs
www.irf.com