BCP55 查看數據表（PDF） - Fairchild Semiconductor

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BCP55

NPN General Purpose Amplifier

Fairchild Semiconductor 

BCP55

C

SOT-223

E

C

B

NPN General Purpose Amplifier

This device is designed for general purpose medium power

amplifiers and switching circuits requiring collector currents

to 1.0 A. Sourced from Process 38. See BCP54 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

VCEO

Collector-Emitter Voltage

60

VCBO

Collector-Base Voltage

60

VEBO

Emitter-Base Voltage

5.0

IC

Collector Current - Continuous

1.5

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJA

Thermal Resistance, Junction to Ambient

Max

BCP55

1.5

12

83.3

Units

V

V

V

A

°C

Units

W

mW/°C

°C/W

© 1997 Fairchild Semiconductor Corporation

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