CGY2105ATS 查看數據表（PDF） - Philips Electronics
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CGY2105ATS Datasheet PDF : 16 Pages
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Philips Semiconductors
High dynamic range dual LNA MMIC
Preliminary specification
CGY2105ATS
PINNING
SYMBOL
VS2
IN2
n.c.
n.c.
IN1
VS1
OUT1
VG1
VG2
OUT2
PIN
1, 2, 14 and 15
3
4
5
6
7, 8, 10 and 11
9
12
13
16
DESCRIPTION
amplifier 2 source
amplifier 2 input
not connected
not connected
amplifier 1 input
amplifier 1 source
amplifier 1 drain output
amplifier 1 gate bias
amplifier 2 gate bias
amplifier 2 drain output
handbook, halfpage
VS2 1
16 OUT2
VS2 2
15 VS2
IN2 3
14 VS2
n.c. 4
13 VG2
CGY2105ATS
n.c. 5
12 VG1
IN1 6
11 VS1
VS1 7
VS1 8
10 VS1
9 OUT1
FCA097
Fig.2 Pin configuration.
LIMITING VALUES
SYMBOL
VDS
VGS
VDG
Vsupply
PARAMETER
drain-source voltage
gate-source voltage
drain-gate voltage
positive supply voltage
Vneg
negative supply voltage
Tamb
Tj
Tstg
Ptot
ambient temperature
junction temperature
storage temperature
total power dissipation
CONDITIONS
see Chapter “Application and test
information”
see Chapter “Application and test
information”
Tamb < 85 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
MIN.
−
−3
−
−
TYP.
−
−
−
−
MAX.
5
+1
7
6
UNIT
V
V
V
V
−6
−
−
V
−40 −
−
−
−
−
−
−
+85 °C
150 °C
150 °C
430 mW
VALUE
138
UNIT
K/W
1999 Dec 23
3
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