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FP101

High Dynamic Range FET

WJ Communications => Triquint 

FP101

High Dynamic Range FET

The Communications Edge TM

Product Information

Product Features

• 50 – 3000 MHz

• 13.5 dB Gain

• +26 dBm P1dB

• +37 dBm OIP3

• 2.0 dB Noise Figure

• MTTF > 100 years

• SOT-89 SMT Package

Product Description

Functional Diagram

The FP101 is a high dynamic range GaAs FET

packaged in a low-cost surface-mount package.

The combination of low noise figure and high

output IP3 at the same bias point makes it ideal for

receiver and transmitter applications. The FP101

achieves +37 dBm OIP3 with consistent quality to

maintain MTTF values exceeding 100 years at

mounting temperatures of +85°C and is housed in a

SOT-89 industry-standard SMT package.

All devices are 100% RF and DC tested. The

product is targeted for applications where high

linearity is required.

GND

4

1

RF IN

2

GND

3

RF OUT

Function

Input / Gate

Output / Drain

Ground

Pin No.

1

3

2, 4

Specification

DC Parameter

Saturated Drain Current, Idss

Transconductance, Gm

Pinch Off Voltage, Vp

Units

mA

mS

V

Min

Typ

270

120

-2.3

Max Comments

Vgs = 0 V, Vds = 3 V

Ids = 1.2 mA

RF Parameter

Frequency Range

Small Signal Gain, Gss

Maximum Stable Gain, Gmsg

Output P1dB

Output IP3

Noise Figure

Units

MHz

dB

dB

dBm

dBm

dB

Min

50

+23

+34

Typ

800

13.5

20.5

+26

+37

1.9

Max Comments

3000

+8 dBm / tone, 10 MHz spacing, 1850 MHz

Vds = +5 V

Test conditions unless otherwise noted: T = 25ºC, Vds = +8 V, Idq = 100 mA, frequency = 800 MHz in a 50 ohm system.

Thermal Information

Parameters

Rating

Operating Case Temperature

-40 to +85° C

Storage Temperature

-55 to +125° C

Thermal Resistance (junction to ground tab) 68° C / W

Junction Temperature* (8V / 100 mA) 139° C

Junction Temperature* (5V / 100 mA) 119° C

* A minimum MTTF of 1 million hours is achieved for junction temperatures below 160° C.

Absolute Maximum Rating

Ordering Information

Parameters

Gate to Source Voltage

RF Input Power (continuous)

DC Power

Junction Temperature

Rating

-6 V

+17 dBm

2.0 W

+220° C

Part No.

FP101

Description

High Dynamic Range FET

Operation of this device above any of these parameters may cause permanent damage.

Specifications and information are subject to change without notice.

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

September 2003

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