STPR120A(1998) 查看數據表（PDF） - STMicroelectronics

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STPR120A
(Rev.:1998)

HIGH EFFICIENCY FAST RECOVERY DIODE

STMicroelectronics 

STPR120A

Fig. 7: Junction capacitance versus reverse

voltage applied (typical values).

C(pF)

20

10

F=1MHz

Tj=25°C

Fig. 8: Recovery charges versus dIF/dt

Qrr(nC)

200

IF=2A

90% confidence

Tj=125°C

100

5

50

2

20

VR(V)

dIF/dt(A/µs)

1

10

1

10

100 200

10 20

50 100 200

500

Fig. 9: Peak reverse recovery current versus dIF/dt.

IRM(A)

20.0

IF=2A

10.0 90% confidence

Tj=125°C

5.0

2.0

1.0

0.5

0.2

0.1

10 20

dIF/dt(A/µs)

50 100 200

500

Fig. 10: Dynamic parameters versus junction tem-

perature.

Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C]

1.25

1.00

0.75

0.50

0.25

0

IRM

Qrr

Tj(°C)

25 50 75 100 125 150

4/5

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