STPR120A 查看數據表（PDF） - STMicroelectronics
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STPR120A Datasheet PDF : 5 Pages
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STPR120A
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values).
Fig. 8: Recovery charges versus dIF/dt
C(pF)
20
10
5
F=1MHz
Tj=25°C
QRR(nC)
200
100
IF=2A
90% confidence
Tj=125°C
50
2
20
VR(V)
dIF/dt(A/µs)
1
10
1
10
100 200
10
20
50
100 200
500
Fig. 9: Peak reverse recovery current versus dIF/dt.
Fig. 10: Dynamic parameters versus junction tem-
perature.
IRM(A)
20.0
10.0
IF=2A
90% confidence
Tj=125°C
1.0
0.1
10
20
dIF/dt(A/µs)
50
100 200
QRR; IRM[Tj] / QRR; IRM[Tj=125°C]
1.25
1.00
0.75
0.50
0.25
500
0
IRM
QRR
Tj(°C)
25
50
75 100 125 150
4/5
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