TEA1210TS 查看數據表（PDF） - Philips Electronics
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TEA1210TS Datasheet PDF : 20 Pages
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Philips Semiconductors
High efficiency, high current DC/DC converter
Preliminary specification
TEA1210TS
CHARACTERISTICS
Tamb = −40 to +80 °C; all voltages are measured with respect to ground; positive currents flow into the IC; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Voltage levels
UPCONVERSION; pin U/D = LOW
VI
VO
VI(start)
VI(uvlo)
input voltage
output voltage
start-up input voltage
undervoltage lockout input voltage
IL < 200 mA
note 1
VI(start)
−
2.90
−
5.50
V
5.50
V
1.20
1.60
1.85
V
1.50
2.10
2.70
V
DOWNCONVERSION; PIN U/D = HIGH
VI
input voltage
VO
output voltage
note 2
2.90
−
1.30
−
5.50
V
5.50
V
GENERAL
Vfb
feedback input voltage
∆Vwindow output voltage window
PWM mode
1.20
1.25
1.30
V
1.5
2.0
3.0
%
Current levels
Iq
Ishdwn
∆Ilim(up)
quiescent current on pins LX
current in shut-down mode
current limit deviation in up mode
Ilim(down)
ILX
IUPOUT
current limit in down mode
maximum continuous current on
pins LX
maximum continuous current on
pins UPOUT
up mode; note 3
100
−
note 4
Ilim(up) set to 0.4 A
−20
Ilim(up) set to 2.0 A
−12
−
Tamb = 80 °C
−
Tamb = 60 °C
−
up mode;
−
VI = 1.8 V; VO = 3.6 V;
Tamb = 80 °C
125
150
µA
2
10
µA
−
+20
%
−
+12
%
4.8
−
A
−
1.5
A
−
1.8
A
−
0.65
A
Power MOSFETs
RDSon(N)
RDSon(P)
drain-to-source on-state resistance
NFET
drain-to-source on-state resistance
PFET
Tj = 27 °C
Tj = 100 °C
Tj = 27 °C
Tj = 100 °C
−
56
63
mΩ
−
75
84
mΩ
−
68
77
mΩ
−
92
104
mΩ
1999 Mar 08
9
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