1N5333BTA 查看數據表（PDF） - ON Semiconductor
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1N5333BTA Datasheet PDF : 8 Pages
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1N5333B Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Device
(Note 1)
1N5333B
1N5334B
1N5335B
1N5336B
1N5337B
1N5338B
1N5339B
1N5340B
1N5341B
1N5342B
1N5343B
1N5344B
1N5345B
1N5346B
1N5347B
1N5348B
1N5349B
1N5350B
1N5351B
1N5352B
1N5353B
1N5354B
1N5355B
1N5356B
1N5357B
1N5358B
1N5359B
1N5360B
1N5361B*
1N5362B
Device
Marking
1N5333B
1N5334B
1N5335B
1N5336B
1N5337B
1N5338B
1N5339B
1N5340B
1N5341B
1N5342B
1N5343B
1N5344B
1N5345B
1N5346B
1N5347B
1N5348B
1N5349B
1N5350B
1N5351B
1N5352B
1N5353B
1N5354B
1N5355B
1N5356B
1N5357B
1N5358B
1N5359B
1N5360B
1N5361B
1N5362B
Zener Voltage (Note 2)
VZ (Volts)
@ IZT
Min Nom Max mA
3.14 3.3 3.47 380
3.42 3.6 3.78 350
3.71 3.9 4.10 320
4.09 4.3 4.52 290
4.47 4.7 4.94 260
4.85 5.1 5.36 240
5.32 5.6 5.88 220
5.70 6.0 6.30 200
5.89 6.2 6.51 200
6.46 6.8 7.14 175
7.13 7.5 7.88 175
7.79 8.2 8.61 150
8.27 8.7 9.14 150
8.65 9.1 9.56 150
9.50 10 10.5 125
10.45 11 11.55 125
11.4 12 12.6 100
12.35 13 13.65 100
13.3 14 14.7 100
14.25 15 15.75 75
15.2 16 16.8 75
16.15 17 17.85 70
17.1 18 18.9 65
18.05 19 19.95 65
19 20 21 65
20.9 22 23.1 50
22.8 24 25.2 50
23.75 25 26.25 50
25.65 27 28.35 50
26.6 28 29.4 50
Zener Impedance (Note 2)
ZZT @ IZT ZZK @ IZK IZK
W
W
mA
3
400
1
2.5
500
1
2
500
1
2
500
1
2
450
1
1.5
400
1
1
400
1
1
300
1
1
200
1
1
200
1
1.5
200
1
1.5
200
1
2
200
1
2
150
1
2
125
1
2.5
125
1
2.5
125
1
2.5
100
1
2.5
75
1
2.5
75
1
2.5
75
1
2.5
75
1
2.5
75
1
3
75
1
3
75
1
3.5
75
1
3.5
100
1
4
110
1
5
120
1
6
130
1
Leakage
Current
IR @ VR
mA Max Volts
300
1
150
1
50
1
10
1
5
1
1
1
1
2
1
3
1
3
10
5.2
10
5.7
10
6.2
10
6.6
7.5
6.9
5
7.6
5
8.4
2
9.1
1
9.9
1
10.6
1
11.5
1
12.2
0.5 12.9
0.5 13.7
0.5 14.4
0.5 15.2
0.5 16.7
0.5 18.2
0.5
19
0.5 20.6
0.5 21.2
IR
(Note 3)
A
20
18.7
17.6
16.4
15.3
14.4
13.4
12.7
12.4
11.5
10.7
10
9.5
9.2
8.6
8.0
7.5
7.0
6.7
6.3
6.0
5.8
5.5
5.3
5.1
4.7
4.4
4.3
4.1
3.9
DVZ
(Note 4)
Volts
0.85
0.8
0.54
0.49
0.44
0.39
0.25
0.19
0.1
0.15
0.15
0.2
0.2
0.22
0.22
0.25
0.25
0.25
0.25
0.25
0.3
0.35
0.4
0.4
0.4
0.45
0.55
0.55
0.6
0.6
IZM
(Note 5)
mA
1440
1320
1220
1100
1010
930
865
790
765
700
630
580
545
520
475
430
395
365
340
315
295
280
264
250
237
216
198
190
176
170
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
1. TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of ±5%.
2. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK)
Test conditions for zener voltage and impedance are as follows: IZ is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″
to 1/2″ from the inside edge of mounting clips to the body of the diode (TA = 25°C +8°C, −2°C).
3. SURGE CURRENT (IR)
Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 2 (TA = 25°C +8°C, −2°C).
4. VOLTAGE REGULATION (DVZ)
The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the
electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting contact located as specified
in Note 2 (TA = 25°C +8°C, −2°C).
5. MAXIMUM REGULATOR CURRENT (IZM)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual
IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 75°C at 3/8″ maximum from the device
body.
*Not Available in the 2000/Ammo Pack.
http://onsemi.com
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