HI112 查看數據表（PDF） - Hi-Sincerity Microelectronics

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HI112

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE9033

Issued Date : 1998.07.01

Revised Date : 2002.01.11

Page No. : 2/4

10000

1000

100

10

1

1

Current Gain & Collector Current

125oC

75oC

25oC

hFE @ VCE=4V

10

100

1000

Collector Current IC (mA)

10000

10000

1000

100

10

1

1

Current Gain & Collector Current

125oC

25oC

75oC

hFE @ VCE=3V

10

100

1000

Collector Current IC (mA)

10000

10000

Saturation Voltage & Collector Current

10000

Saturation Voltage & Collector Current

1000

100

100

25oC

125oC

75oC

VCE(sat) @ IC=100IB

1000

Collector Current IC (mA)

10000

10000

Saturation Voltage & Collector Current

1000

100

100

25oC

125oC

75oC

VCE(sat) @ IC=250IB

1000

Collector Current IC (mA)

10000

10000

ON Voltage & Collcetor Current

1000

25oC

125oC

75oC

100

100

HI112

VBE(sat) @ IC=250IB

1000

Collector Current IC (mA)

10000

1000

25oC

125oC

75oC

100

100

VBE(ON) @ VCE=4V

1000

Collector Current IC (mA)

10000

HSMC Product Specification

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