AS6VA5128-BC 查看數據表（PDF） - Unspecified

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AS6VA5128-BC

2.7V to 3.3V 512K × 8 Intelliwatt™ low-power CMOS SRAM

Unspecified 

®

Write cycle (over the operating range)11

Parameter

Symbol

Min

Max

Write cycle time

Chip select to write end

Address setup to write end

Address setup time

Write pulse width

Address hold from end of write

Data valid to write end

Data hold time

tWC

55

–

tCW

40

–

tAW

40

–

tAS

0

–

tWP

35

–

tAH

0

–

tDW

25

–

tDH

0

–

Write enable to output in high Z

Output active from write end

tWZ

0

20

tOW

5

–

Write waveform 1 (WE controlled)10,11

Address

tWC

tAW

tWP

WE

tAS

DIN

tWZ

DOUT

tAH

tDW

Data valid

tDH

tOW

Write waveform 2 (CS controlled)10,11

tWC

tAW

Address

tAS

tCW

CS

tWP

WE

tWZ

DIN

DOUT

tDW

Data valid

tAH

tDH

AS6VA5128

Unit

Notes

ns

ns

12

ns

ns

12

ns

ns

ns

ns

4, 5

ns

4, 5

ns

4, 5

10/6/00

ALLIANCE SEMICONDUCTOR

5

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