P4C1256-35JC 查看數據表（PDF） - Semiconductor Corporation

零件编号

产品描述 (功能)

生产厂家

P4C1256-35JC

HIGH SPEED 32K x 8 STATIC CMOS RAM

Semiconductor Corporation 

P4C1256

DATA RETENTION CHARACTERISTICS (P4C1256L Military Temperature Only)

Symbol

Parameter

V

V for Data Retention

DR

CC

Test Conditons

Typ.*

Max

Min

V=

V=

Unit

CC

CC

2.0V 3.0V 2.0V 3.0V

2.0

V

I

Data Retention Current

CCDR

tCDR

Chip Deselect to

Data Retention Time

tR†

Operation Recovery Time

*TA = +25°C

§tRC = Read Cycle Time

† This parameter is guaranteed but not tested.

CE ≥ VCC –0.2V,

VIN ≥ VCC –0.2V

or VIN ≤ 0.2V

10

0

tRC§

15 100 200 µA

ns

ns

DATA RETENTION WAVEFORM

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

Parameter

Temperature

Range

Commercial

ICC Dynamic Operating Current* Industrial

Military

–12 –15 –20 –25 –35 –45 –55 –70 Unit

170 160 155 150 145 N/A N/A N/A mA

N/A 170 165 160 155 150 N/A N/A mA

N/A N/A 170 165 160 155 150 150 mA

*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.

Document # SRAM119 REV G

Page 3 of 17

Share Link: