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P4C1256 查看數據表(PDF) - Performance Semiconductor

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P4C1256
Performance-Semiconductor
Performance Semiconductor Performance-Semiconductor
P4C1256 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
P4C1256
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature
Range
Commercial
ICC Dynamic Operating Current* Industrial
Military
–12 –15 –20 –25 –35 –45 –55 –70 Unit
170 160 155 150 145 N/A N/A N/A mA
N/A 170 165 160 155 150 N/A N/A mA
N/A N/A 170 165 160 155 150 150 mA
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC
=
5V
±
10%,
All
Temperature
Ranges)(2)
Sym.
Parameter
-12
-15
-20
-25
-35
-45
-55
-70 Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max
t
RC
Read Cycle Time 12
15
20
25
35
45
55
70
ns
t
AA
Address Access
12
15
20
25
35
45
55
70 ns
Time
tAC Chip Enable
Access Time
12
15
20
25
35
45
55
70 ns
tOH Output Hold from 2
2
2
3
3
3
3
3
ns
Address Change
tLZ Chip Enable to 2
2
2
3
3
3
3
3
ns
Output in Low Z
tHZ Chip Disable to
5
8
9
11
15
20
25
30 ns
Output in High Z
tOE Output Enable
Low to Data
Valid
5
7
9
10
15
20
25
30 ns
tOLZ Output Enable
0
0
0
0
0
0
0
0
ns
Low to Low Z
t
OHZ
Output Enable
High to High Z
5
7
9
11
15
20
25
30 ns
t
Chip Enable to 0
PU
0
0
0
0
0
0
0
ns
Power Up Time
t
Chip Disable to
PD
Power Down
Time
12
15
20
20
20
25
30
35 ns
119

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