BUX12 查看數據表（PDF） - SavantIC Semiconductor

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BUX12

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BUX12

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=50mA; IC=0

VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=0.5A

VCEsat-2 Collector-emitter saturation voltage IC=10 A;IB=1.25 A

VBEsat

ICEX

ICEO

Base-emitter saturation voltage

Collector cut-off current

Collector cut-off current

IC=10 A;IB=1.25 A

VCE=300V;VBE=-1.5V

TC=125

VCE=200V;IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=5A ; VCE=4V

hFE-2

DC current gain

IC=10A ; VCE=4V

fT

Transition frequency

IC=1A ; VCE=15V; f=10MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=10A ;IB1=1.25A

VCC=150V

IC=10A ;IB1=-IB2=1.25A

VCC=150V

MIN TYP. MAX UNIT

250

V

7

V

0.22

1

V

0.5

1.5

V

1.23 1.5

V

1.5

6.0

mA

1.5

mA

1.0

mA

20

60

10

8.0

MHz

0.28

1

µs

1.45

2

µs

0.23 0.5

µs

2

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