D1002UK 查看數據表（PDF） - Semelab - > TT Electronics plc
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D1002UK Datasheet PDF : 4 Pages
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MECHANICAL DATA
A
B
C
1
4
M
2
D
3
E
F
G
HK
PIN 1
PIN 3
SOURCE
SOURCE
DA
PIN 2
PIN 4
IJ
DRAIN
GATE
DIM mm
A 24.76
B 18.42
C
45°
D
6.35
E
3.17
F
5.71
G
9.52
H
6.60
I
0.13
J
4.32
K
2.54
M 20.32
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 DIA
0.225
0.375
0.260
0.005
0.170
0.100
0.800
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
TetraFET
D1002UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
40W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
87W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
10A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
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