BUZ76 查看數據表（PDF） - Siemens AG
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BUZ76 Datasheet PDF : 9 Pages
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BUZ 76
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
7.0 Ptot = 40W
l
A
kj ihg f e
6.0
ID
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
VGS [V]
d a 4.0
b 4.5
c 5.0
d 5.5
e 6.0
c f 6.5
g 7.0
h 7.5
i 8.0
j 9.0
b
k 10.0
l 20.0
1.0
a
0.5
0.0
0 4 8 12 16 20 24 V 30
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
6.0
A
5.0
ID
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
5.5
a
b
c
Ω
RDS (on) 4.5
4.0
3.5
3.0
2.5
d
2.0
e
1.5
f
h
j
g
i
k
1.0
VGS [V] =
0.5 a b
4.05 5.0
0.0
0.0 1.0
cd
5.5 6.0
2.0
ef
6.5 7.0
3.0
ghi j k
7.5 8.0 9.0 10.0 20.0
4.0 5.0 A 6.5
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
4.5
S
gfs
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
1.0
2.0
3.0
4.0 A 5.5
ID
Semiconductor Group
6
07/96
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