1N5338B 查看數據表（PDF） - ON Semiconductor
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1N5338B Datasheet PDF : 8 Pages
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1N5333B Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Device†
(Note 1)
1N5333B, G
1N5334B, G
1N5335B, G
1N5336B, G
1N5337B, G
1N5338B, G
1N5339B, G
1N5340B, G
1N5341B, G
1N5342B, G
1N5343B, G
1N5344B, G
1N5345B, G
1N5346B, G
1N5347B, G
1N5348B, G
1N5349B, G
1N5350B, G
1N5351B, G
1N5352B, G
1N5353B, G
1N5354B, G
1N5355B, G
1N5356B, G
1N5357B, G
1N5358B, G
1N5359B, G
1N5360B, G
1N5361B, G
1N5362B, G
Device
Marking
Zener Voltage (Note 2)
VZ (Volts)
@ IZT
Min Nom Max mA
Zener Impedance (Note 2)
ZZT @ IZT ZZK @ IZK IZK
W
W
mA
Leakage
Current
IR @ VR
mA Max Volts
IR
(Note 3)
A
DVZ
(Note 4)
Volts
IZM
(Note 5)
mA
1N5333B 3.14 3.3 3.47 380
3
1N5334B 3.42 3.6 3.78 350
2.5
1N5335B 3.71 3.9 4.10 320
2
1N5336B 4.09 4.3 4.52 290
2
1N5337B 4.47 4.7 4.94 260
2
400
1 300
1
20
0.85
1440
500
1 150
1
18.7
0.8
1320
500
1
50
1
17.6
0.54
1220
500
1
10
1
16.4
0.49
1100
450
1
5
1
15.3
0.44
1010
1N5338B 4.85 5.1 5.36 240
1.5
1N5339B 5.32 5.6 5.88 220
1
1N5340B 5.70 6.0 6.30 200
1
1N5341B 5.89 6.2 6.51 200
1
1N5342B 6.46 6.8 7.14 175
1
400
1
1
1
14.4
0.39
930
400
1
1
2
13.4
0.25
865
300
1
1
3
12.7
0.19
790
200
1
1
3
12.4
0.1
765
200
1
10
5.2 11.5
0.15
700
1N5343B 7.13 7.5 7.88 175
1.5
1N5344B 7.79 8.2 8.61 150
1.5
1N5345B 8.27 8.7 9.14 150
2
1N5346B 8.65 9.1 9.56 150
2
1N5347B 9.50 10 10.5 125
2
200
1
10
5.7 10.7
0.15
630
200
1
10
6.2
10
0.2
580
200
1
10
6.6
9.5
0.2
545
150
1
7.5
6.9
9.2
0.22
520
125
1
5
7.6
8.6
0.22
475
1N5348B 10.45 11 11.55 125
2.5
1N5349B 11.4 12 12.6 100
2.5
1N5350B 12.35 13 13.65 100
2.5
1N5351B 13.3 14 14.7 100
2.5
1N5352B 14.25 15 15.75 75
2.5
125
1
5
8.4
8.0
0.25
430
125
1
2
9.1
7.5
0.25
395
100
1
1
9.9
7.0
0.25
365
75
1
1
10.6 6.7
0.25
340
75
1
1
11.5 6.3
0.25
315
1N5353B 15.2 16 16.8 75
2.5
1N5354B 16.15 17 17.85 70
2.5
1N5355B 17.1 18 18.9 65
2.5
1N5356B 18.05 19 19.95 65
3
1N5357B 19 20 21 65
3
75
1
1
12.2 6.0
0.3
295
75
1
0.5 12.9 5.8
0.35
280
75
1
0.5 13.7 5.5
0.4
264
75
1
0.5 14.4 5.3
0.4
250
75
1
0.5 15.2 5.1
0.4
237
1N5358B 20.9 22 23.1 50
3.5
1N5359B 22.8 24 25.2 50
3.5
1N5360B 23.75 25 26.25 50
4
1N5361B 25.65 27 28.35 50
5
1N5362B 26.6 28 29.4 50
6
75
1
0.5 16.7 4.7
0.45
216
100
1
0.5 18.2 4.4
0.55
198
110
1
0.5
19
4.3
0.55
190
120
1
0.5 20.6 4.1
0.6
176
130
1
0.5 21.2 3.9
0.6
170
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
1. TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of ±5%.
2. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK)
Test conditions for zener voltage and impedance are as follows: IZ is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″
to 1/2″ from the inside edge of mounting clips to the body of the diode (TA = 25°C +8°C, −2°C).
3. SURGE CURRENT (IR)
Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 2 (TA = 25°C +8°C, −2°C).
4. VOLTAGE REGULATION (DVZ)
The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the
electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting contact located as specified
in Note 2 (TA = 25°C +8°C, −2°C).
5. MAXIMUM REGULATOR CURRENT (IZM)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual
IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 75°C at 3/8″ maximum from the device
body.
†The “G’’ suffix indicates Pb−Free package available.
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