1N5338B 查看數據表（PDF） - ON Semiconductor
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1N5338B Datasheet PDF : 8 Pages
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1N5333B Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Device†
(Note 6)
1N5363B, G
1N5364B, G
1N5365B, G
1N5366B, G
1N5367B, G
1N5368B, G
1N5369B, G
1N5370B, G
1N5371B, G
1N5372B, G
1N5373B, G
1N5374B, G
1N5375B, G
1N5376B, G
1N5377B, G
1N5378B, G
1N5379B, G
1N5380B, G
1N5381B, G
1N5382B, G
1N5383B, G
1N5384B, G
1N5385B, G
1N5386B, G
1N5387B, G
1N5388B, G
Device
Marking
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
1N5368B
1N5369B
1N5370B
1N5371B
1N5372B
1N5373B
1N5374B
1N5375B
1N5376B
1N5377B
1N5378B
1N5379B
1N5380B
1N5381B
1N5382B
1N5383B
1N5384B
1N5385B
1N5386B
1N5387B
1N5388B
Zener Voltage (Note 7)
VZ (Volts)
@ IZT
Min Nom Max mA
28.5 30 31.5 40
31.35 33 34.65 40
34.2 36 37.8 30
37.05 39 40.95 30
40.85 43 45.15 30
44.65 47 49.35 25
48.45 51 53.55 25
53.2 56 58.8 20
57 60 63 20
58.9 62 65.1 20
64.6 68 71.4 20
71.25 75 78.75 20
77.9 82 86.1 15
82.65 87 91.35 15
86.45 91 95.55 15
95 100 105 12
104.5 110 115.5 12
114 120 126 10
123.5 130 136.5 10
133 140 147 8
142.5 150 157.5 8
152 160 168 8
161.5 170 178.5 8
171 180 189 5
180.5 190 199.5 5
190 200 210 5
Zener Impedance (Note 7)
ZZT @ IZT ZZK @ IZK IZK
W
W
mA
8
140
1
10
150
1
11
160
1
14
170
1
20
190
1
25
210
1
27
230
1
35
280
1
40
350
1
42
400
1
44
500
1
45
620
1
65
720
1
75
760
1
75
760
1
90
800
1
125
1000
1
170
1150
1
190
1250
1
230
1500
1
330
1500
1
350
1650
1
380
1750
1
430
1750
1
450
1850
1
480
1850
1
Leakage
Current
IR @ VR
mA Max Volts
0.5 22.8
0.5 25.1
0.5 27.4
0.5 29.7
0.5 32.7
0.5 35.8
0.5 38.8
0.5 42.6
0.5 45.5
0.5 47.1
0.5 51.7
0.5
56
0.5 62.2
0.5
66
0.5 69.2
0.5
76
0.5 83.6
0.5 91.2
0.5 98.8
0.5 106
0.5 114
0.5 122
0.5 129
0.5 137
0.5 144
0.5 152
IR
(Note 8)
A
3.7
3.5
3.5
3.1
2.8
2.7
2.5
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.2
1.1
1.1
1.0
1.0
0.9
0.9
DVZ
(Note 9)
Volts
0.6
0.6
0.65
0.65
0.7
0.8
0.9
1.0
1.2
1.35
1.52
1.6
1.8
2.0
2.2
2.5
2.5
2.5
2.5
2.5
3.0
3.0
3.0
4.0
5.0
5.0
IZM
(Note 10)
mA
158
144
132
122
110
100
93
86
79
76
70
63
58
54.5
52.5
47.5
43
39.5
36.6
34
31.6
29.4
28
26.4
25
23.6
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
6. TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of ±5%.
7. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK)
Test conditions for zener voltage and impedance are as follows: IZ is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″
to 1/2″ from the inside edge of mounting clips to the body of the diode (TA = 25°C +8°C, −2°C).
8. SURGE CURRENT (IR)
Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 7 (TA = 25°C +8°C, −2°C).
9. VOLTAGE REGULATION (DVZ)
The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the
electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting contact located as specified
in Note 7 (TA = 25°C +8°C, −2°C).
10. MAXIMUM REGULATOR CURRENT (IZM)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual
IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 75°C at 3/8″ maximum from the device
body.
†The “G’’ suffix indicates Pb−Free package available.
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