OM55N10SA - OM75N06SC
OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA
gfs(S)
50
40
30
20
10
Transconductance
TJ = 40°C
TJ = 25°C
TJ = 125°C
VDS > ID(on) x RDS(on)max
Static Drain-Source On Resistance
RDS(on)
0.030
0.025
VGS = 10V
0.020
0.015
0
0
20
40
60
80
100 ID(A)
0.010
0
20
40
60
80
ID(A)
Gate Charge vs Gate-Source Voltage
VGS (V)
10
8
6
4
VDS = 80V
ID = 30A
2
0
0
20
40
60
80
100 Qg(nC)
Capacitance Variations
C(nF)
5
4
Cies
3
VDS = 0
f = 1MHz
2
1
Coes
0
Cres
0
20
40
60
80
100
VDS(V
Normalized Gate Threshold
Voltage vs Temperature
VGS(th)
(norm)
VDS = VGS
ID = 250µA
1.2
1.0
0.8
0.6
-50
0
50
100
TJ (°C)
Normalized On Resistance
vs Temperature
RDS(on)
(norm)
1.5
1.0
0.5
VDS = 10V
ID = 30A
0
-50
0
50
100
TJ (°C)
3.1 - 53
3.1