TSMF1000(2000) 查看數據表（PDF） - Vishay Semiconductors

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TSMF1000
(Rev.:2000)

High Speed IR Emitting Diode in ø SMD Package

Vishay Semiconductors 

TSMF1000

Vishay Telefunken

Basic Characteristics

Tamb = 25_C

Parameter

Forward Voltage

Temp. Coefficient of VF

Reverse Current

Junction Capacitance

Radiant Intensity

Radiant Power

Temp. Coefficient of fe

Angle of Half Intensity

Peak Wavelength

Spectral Bandwidth

Temp. Coefficient of lp

Rise Time

Fall Time

Test Conditions

IF = 100 mA, tp = 20 ms

IF = 1 A, tp = 100 ms

IF = 100mA

VR = 5 V

VR = 0 V, f = 1 MHz, E = 0

IF = 100 mA, tp = 20 ms

IF = 1.0 A, tp = 100 ms

IF = 100 mA, tp = 20 ms

IF = 20 mA

IF = 100 mA

IF = 100 mA

IF = 100 mA

IF = 100 mA

IF = 100 mA

Symbol Min

VF

VF

TKVF

IR

Cj

Ie

Ie

fe

TKfe

ϕ

lp

Dl

TKlp

tr

tf

Typ

Max Unit

1.4

1.7

V

2.4

V

–1.7

mV/K

10 mA

160

pF

20

mW/sr

200

mW/sr

35

mW

–0.6

%/K

±17

deg

870

nm

40

nm

0.2

nm/K

30

ns

30

ns

Typical Characteristics (Tamb = 25_C unless otherwise specified)

104

1.2

103

102

tp = 100 ms

tp / T = 0.001

101

1.1

IF = 10 mA

1.0

0.9

0.8

100

0

1

2

3

4

94 7952 e

VF – Forward Voltage ( V )

Figure 1. Forward Current vs. Forward Voltage

0.7

0

20

40

60

80 100

94 7990 e

Tamb – Ambient Temperature ( °C )

Figure 2. Relative Forward Voltage vs.

Ambient Temperature

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2 (4)

Document Number 81061

Rev. 4, 31-Mar-00

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