TSMF1030(2008) 查看數據表（PDF） - Vishay Semiconductors
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TSMF1030
(Rev.:2008)
(Rev.:2008)
Vishay Semiconductors
TSMF1030 Datasheet PDF : 9 Pages
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TSMF1000, TSMF1020, TSMF1030
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm,
GaAlAs Double Hetero
TSMF1000
TSMF1020
TSMF1030
16758-5
DESCRIPTION
TSMF1000 series are infrared, 890 nm emitting diodes in
GaAlAs double hetero (DH) technology with high radiant
power and high speed, molded in clear, untinted plastic
packages (with lens) for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: GW, RGW, yoke, axial
• Dimensions (L x W x H in mm): 2.5 x 2 x 2.7
• Peak wavelength: λp = 890 nm
• High radiant power
• Angle of half intensity: ϕ = ± 17°
• Low forward voltage
• Suitable for high pulse current operation
• Versatile terminal configurations
• Package matches with detector TEMD1000
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Control and drive circuits
• Shaft encoders
PRODUCT SUMMARY
COMPONENT
TSMF1000
Ie (mW/sr)
5
TSMF1020
5
TSMF1030
5
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 17
± 17
± 17
λP (nm)
890
890
890
tr (ns)
30
30
30
ORDERING INFORMATION
ORDERING CODE
TSMF1000
TSMF1020
TSMF1030
Note
MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
Tape and reel
REMARKS
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/reel
PACKAGE FORM
Reverse gullwing
Gullwing
Yoke
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
SYMBOL
VR
IF
IFM
IFSM
PV
VALUE
5
100
200
0.8
180
UNIT
V
mA
mA
A
mW
www.vishay.com
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81061
Rev. 1.7, 04-Sep-08
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