TSMF1040 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
TSMF1040 Datasheet PDF : 9 Pages
| |||
VISHAY
TSMF1000/1020/1030/1040
Vishay Semiconductors
High Speed IR Emitting Diode in SMD Package
Description
TSMF1000 series are high speed infrared emitting
diodes in GaAlAs/GaAs/GaAlAs double hetero tech-
nology (DH) molded in clear SMD package with dome
lens.
DH chip technology represents best performance for
speed, radiant power, forward voltage and longterm
reliability.
Features
• High speed
• Extra high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity ϕ = ± 17°
• Peak wavelength λp = 870 nm
• Longterm reliability
• Matched with PIN Photodiode TEMD1000
• Versatile terminal configurations
TSMF1000
TSMF1020
TSMF1030
TSMF1040
16758
Applications
IrDA compatible data transmission
Miniature light barrier
For control and drive circuits
Photointerrupters
Incremental sensors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test condition
tp/T = 0.5, tp = 100 µs
tp = 100 µs
t ≤ 5sec
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
100
200
0.8
190
100
- 40 to + 85
- 40 to + 100
<260
400
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward Voltage
IF = 20 mA
IF = 1 A, tp = 100 µs
Temp. Coefficient of VF
IF = 1.0mA
Reverse Current
VR = 5 V
Junction Capacitance
VR = 0 V, f = 1 MHz, E = 0
Symbol
Min
VF
VF
TKVF
IR
Cj
Typ.
1.3
2.4
- 1.7
160
Max
Unit
1.5
V
V
mV/K
10
µA
pF
Document Number 81061
Rev. 6, 21-May-03
www.vishay.com
1
Share Link: 