SFH6345 查看數據表（PDF） - Infineon Technologies
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SFH6345 Datasheet PDF : 4 Pages
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SFH6345
High Speed 5.3 kV
Optocoupler
FEATURES
• Direct Replacement for HCPL4503
• High Speed Optocoupler without Base
Connection
• GaAlAs Emitter
• Integrated Detector with Photodiode and
Transistor
• High Data Transmission Rate: 1 MBit/s
• TTL Compatible
• Open Collector Output
• CTR at IF=16 mA, VO=0.4 V, VCC=4.5 V,
TA=25°C: ≥19%
• Good CTR Linearity Relative to Forward
Current
• Field Effect Stable
• Low Coupling Capacitance
• Very High Common Mode Transient Immunity
dV/dt: ≥15 kV/µs at VCM=1500 V
• Isolation Test Voltage: 5300 VRMS
•
•V
DE
VDE 0884 Available with Option 1
• UL Approval, File #E52744
APPLICATIONS
• Data Communications
• IGBT Drivers
• Programmable Controllers
DESCRIPTION
The SFH6345 is an optocoupler with a GaAlAs
infrared emitting diode, optically coupled to an inte-
grated photodetector consisting of a photodiode
and a high speed transistor in a DIP-8 plastic pack-
age. The device is similar to the 6N135 but has an
additional Faraday shield on the detector which
enhances the input-output dv/dt immunity.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2 MHz. The
potential difference between the circuits to be cou-
pled should not exceed the maximum permissible
reference voltages.
Dimensions in Inches (mm)
pin one ID
4 321
.255 (6.48)
.268 (6.81)
5 678
NC 1
Anode 2
Cathode 3
8 VCC
7 NC
6 Collector
.030 (0.76)
.045 (1.14)
4° typ.
.050 (1.27)
.018 (.46)
.022 (.56)
.379 (9.63)
.390 (9.91)
NC 4
5 Emitter
.031 (0.79)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
10 °
3°–9°
.008 (.20)
.012 (.30)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage ......................................................................................3 V
DC Forward Current ...........................................................................25 mA
Surge Forward Current (tp≤1 µs, 300 pulses/sec.) .................................1 A
Total Power Dissipation..................................................................45 mW
Detector (Si Photodiode + Transistor)
Supply Voltage .......................................................................... –0.5 to 30 V
Output Voltage ........................................................................–0.5V to 25 V
Output Current .....................................................................................8 mA
Total Power Dissipation ...................................................................100 mW
Package Insulation
Isolation Test Voltage
between emitter and detector .................................................5300 VRMS
(refer to climate DIN 40046, part 2, Nov. 74)
Creepage ......................................................................................... ≥7 mm
Clearance......................................................................................... ≥7 mm
Comparative Tracking Index
per DIN IEC 112/VDE0303, part 1 ................................................... ≥175
Isolation Resistance
VIO=500 V, TA=25°C, RISOL ........................................................ ≥1012 Ω
VIO=500 V, TA=100°C, RISOL ...................................................... ≥1011 Ω
Storage Temperature Range .................................................–55 to +150°C
Ambient Temperature Range ................................................–55 to +100°C
Junction Temperature......................................................................... 100°C
Soldering Temperature (t=10 sec. max.)............................................ 260°C
Dip soldering: distance to seating plane ≥1.5 mm
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
1
May 17, 2000–09
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