BUL44D2 查看數據表（PDF） - Motorola => Freescale

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BUL44D2

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

Motorola => Freescale 

10

IC/IB = 5

TYPICAL STATIC CHARACTERISTICS

10

IC/IB = 10

BUL44D2

1

TJ = – 20°C

TJ = 25°C

TJ = 125°C

0.1

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 7A. Base–Emitter Saturation Region

10

IC/IB = 20

1

TJ = – 20°C

TJ = 25°C

TJ = 125°C

0.1

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (AMPS)

Figure 7C. Base–Emitter Saturation Region

1

TJ = – 20°C

TJ = 25°C

TJ = 125°C

0.1

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 7B. Base–Emitter Saturation Region

10

25°C

1

125°C

0.1

0.01

0.1

1

10

REVERSE EMITTER–COLLECTOR CURRENT (AMPS)

Figure 8. Forward Diode Voltage

Motorola Bipolar Power Transistor Device Data

5

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