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BUL44D2 查看數據表(PDF) - Motorola => Freescale

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BUL44D2 Datasheet PDF : 12 Pages
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TYPICAL CHARACTERISTICS
BUL44D2
10
1 µs
10 µs
1
5 ms
1 ms
DC
0.1
0.01
10
100
1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 23. Forward Bias Safe Operating Area
2.5
TC 125°C
2
GAIN 4
LC = 500 µH
1.5
1
0.5
–5 V
0V
–1.5 V
0
200 300 400 500 600 700 800 900
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 24. Reverse Bias Safe Operating Area
1
SECOND BREAKDOWN
0.8
DERATING
0.6
THERMAL DERATING
0.4
0.2
0
20 40
60
80
100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 25. Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Figure 23 is based
on TC = 25°C; TJ(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when TC > 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 23 may be found at any case temperature by using
the appropriate curve on Figure 25.
TJ(pk) may be calculated from the data in Figure 26. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn–off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating
area (Figure 24). This rating is verified under clamped
conditions so that the device is never subjected to an
avalanche mode.
Motorola Bipolar Power Transistor Device Data
9

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