2N3725 查看數據表（PDF） - STMicroelectronics
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2N3725 Datasheet PDF : 6 Pages
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2N3725
THERMAL DATA
Rth j-cas e Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max
50
°C/W
Max
220
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
I CBO
Collector Cutoff Current (IE = 0) VCB = 60 V
VCB = 60 V
T amb = 100 °C
V(B R)CBO Collector-base Breakdown
Voltage (IE = 0)
IC = 10 µA
80
V(BR)CES Collector-emitter Breakdown
Voltage (VB E = 0)
IC = 10 µA
80
V(BR)CE O * Collector-emitter Breakdown
Voltage (IB = 0)
IC = 10 mA
50
V(B R)E BO Emitter-base Breakdown
Voltage (IC = 0)
IE = 10 µA
6
VCE (s at )* Collector-emitter Saturation
Voltage
IC = 10 mA
IC = 100 mA
IC = 300 mA
IC = 500 mA
IC = 800 mA
IC = 1000 mA
IB = 1 mA
IB = 10 mA
IB = 30 mA
IB = 50 mA
IB = 80 mA
IB = 100 mA
VBE (s at )* Base-emitter Saturation Voltage IC = 10 mA
IB = 1 mA
IC = 100 mA
IB = 10 mA
IC = 300 mA
IB = 30 mA
IC = 500 mA
IB = 50 mA
0.9
IC = 800 mA
IB = 80 mA
IC = 1000 mA IB = 100 mA
hFE*
DC Current Gain
IC = 10 mA
VCE = 1 V
30
IC = 100 mA
VCE = 1 V
60
IC = 300 mA
VCE = 1 V
40
I C = 1000 mA VCE = 5 V
25
IC = 800 mA
VCE = 2 V
20
IC = 500 mA
VCE = 1 V
35
hfe
High Frequency Current Gain
IC = 50 mA
VCE = 10 V
3
f = 100 MHz
CCB O Collector-base Capacitance
IE = 0
f = 1 MHz
VCB = 10 V
CEB O Emitter-base Capacitance
IC = 0
f = 1 MHz
VCB = 0.5 V
to n ** Turn-on Time
to ff**
Turn off Time
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
** See test circuit.
IC = 500 mA
IB = 50 mA
VCC = 30 V
IC = 500 mA
VCC = 30 V
I B1 = – I B2 = 50 mA
Typ.
0.19
0.21
0.31
0.4
0.5
0.6
0.64
0.75
0.89
1.0
1.1
60
90
60
65
40
Max.
1.7
120
0.25
0.26
0.4
0.52
0.8
0.95
0.76
0.86
1.1
1.2
1.5
1.7
150
10
55
35
60
Unit
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
pF
pF
ns
ns
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