2N6497(2002) 查看數據表（PDF） - ON Semiconductor

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2N6497
(Rev.:2002)

High Voltage NPN Silicon Power Transistors

ON Semiconductor 

ON Semiconductor)

High Voltage NPN Silicon

Power Transistors

. . . designed for high voltage inverters, switching regulators and

line–operated amplifier applications. Especially well suited for

switching power supply applications.

• High Collector–Emitter Sustaining Voltage –

VCEO(sus) = 250 Vdc (Min)

• Excellent DC Current Gain

hFE = 10–75 @ IC = 2.5 Adc

• Low Collector–Emitter Saturation Voltage @ IC = 2.5 Adc –

VCE(sat) = 1.0 Vdc (Max)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current – Continuous

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ – Peak

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction

Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Indicates JEDEC Registered Data.

Symbol

VCEO

VCB

VEB

IC

IB

PD

TJ,Tstg

Symbol

RθJC

Value

250

350

6.0

5.0

10

2.0

80

0.64

–65 to +150

Max

1.56

Unit

Vdc

Vdc

Vdc

Adc

Adc

Watts

W/_C

_C

Unit

_C/W

2N6497

5 AMPERE

POWER TRANSISTORS

NPN SILICON

250 VOLT

80 WATTS

4

1

2

3

STYLE 1:

PIN 1.

2.

3.

4.

BASE

COLLECTOR

EMITTER

COLLECTOR

CASE 221A–09

TO–220AB

© Semiconductor Components Industries, LLC, 2002

1

April, 2002 – Rev. 11

Publication Order Number:

2N6497/D

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