2N6497(2002) 查看數據表（PDF） - ON Semiconductor
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2N6497 Datasheet PDF : 8 Pages
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2N6497
100
TJ = 150°C
70
50
25°C
30
20
-ā55°C
VCE = 10 V
10
7.0
5.0
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
4.0
TJ = 25°C
3.2
2.4
1.6
IC = 1.0 A
2.0 A
0.8
3.0 A 5.0 A
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
1.4
TJ = 25°C
1.2
1.0
VBE(sat) @ IC/IB = 5.0
0.8
0.6
VBE @ VCE = 10 V
0.4
0.2
0
0.05 0.07 0.1
VCE(sat) @ IC/IB = 5.0
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
IC/IB = 2.5
2.0 3.0 5.0
+ā4.0
+ā3.0
*APPLIES FOR IC/IB v
hFEĂ@ĂVCEĂ
3
+Ă
10ĂV
+ā2.0
+ā1.0 *θVC for VCE(sat)
25°C to 150°C
0
-ā1.0
θVB for VBE
-ā2.0
-ā55°C to 25°C
25°C to 150°C
-ā55 to 25°C
-ā3.0
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
104
103 VCE = 200 V
102
TJ = 150°C
101
100°C
100
10-1
10-2
-ā0.1
25°C
REVERSE
-ā0.2
0
FORWARD
+ā0.2
+ā0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 11. Collector Cutoff Region
1000
700
500
Cib
300
200
TJ = 25°C
100
70
50
30
Cob
20
10
+ā0.6
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 60 100 200 400
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Capacitance
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