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STPS8H100G(1999) 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
STPS8H100G
(Rev.:1999)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS8H100G Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
STPS8H100D/F/G/G-1
THERMAL RESISTANCES
Symbol
Rth (j-c)
Rth (j-c)
Junction to case
Junction to case
Parameter
TO-220AC / I2PAK / D2PAK
ISOWATT220AC
Value
1.6
4
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IR * Reverse leakage current
VF ** Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 25°C
IF = 8 A
Tj = 25°C
IF = 10 A
Tj = 25°C
IF = 16 A
Tj = 125°C IF = 8 A
Tj = 125°C IF = 10 A
Tj = 125°C IF = 16 A
Min. Typ. Max. Unit
4.5 µA
2
6
mA
0.71 V
0.77
0.81
0.56 0.58
0.59 0.64
0.65 0.68
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.48 x IF(AV) + 0.0125 x IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current.
(TO-220AC / ISOWATT220AC / I2PAK / D2PAK)
Fig. 2-1: Average forward current versus ambient
temperature (δ=0.5) (TO-220AC / I2PAK / D2PAK).
PF(av)(W)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
012
δ = 0.05
3
δ = 0.1 δ = 0.2
IF(av) (A)
456
δ = 0.5
δ=1
T
δ=tp/T
tp
7 8 9 10
IF(av)(A)
10
8
Rth(j-a)=Rth(j-c)
6
4
T
2
Rth(j-a)=15°C/W
δ=tp/T
tp
Tamb(°C)
0
0 20 40 60 80 100 120 140 160 180
2/7

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