STPS8H100FP 查看數據表（PDF） - STMicroelectronics

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STPS8H100FP

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STMicroelectronics 

®

STPS8H100D/F/G/R/FP

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

IF(AV)

VRRM

Tj (max)

VF (max)

8A

100 V

175 °C

0.58 V

FEATURES AND BENEFITS

s NEGLIGIBLE SWITCHING LOSSES

s HIGH JUNCTION TEMPERATURE CAPABILITY

s LOW LEAKAGE CURRENT

s GOOD TRADE OFF BETWEEN LEAKAGE

CURRENT AND FORWARD VOLTAGE

DROP

s INSULATED PACKAGE:

ISOWATT220AC, TO-220FPAC

Insulating voltage = 2000V DC

Capacitance = 12pF

s AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Schottky barrier rectifier designed for high fre-

quency compact Switched Mode Power Sup-

plies such as adaptators and on board DC/DC

converters.

ABSOLUTE RATINGS (limiting values)

A

K

TO-220AC

STPS8H100D

K

A

K

ISOWATT220AC

STPS8H100F

A

NC

D2PAK

STPS8H100G

A

K

NC

I2PAK

STPS8H100R

A

K

TO-220FPAC

STPS8H100FP

Symbol

Parameter

Value

VRRM Repetitive peak reverse voltage

100

IF(RMS) RMS forward current

30

IF(AV) Average forward current

δ = 0.5

TO-220AC /

Tc= 165°C

8

I2PAK / D2PAK

ISOWATT220AC Tc = 150°C

TO-220FPAC

IFSM Surge non repetitive forward

tp = 10 ms sinusoidal

250

current

IRRM

IRSM

PARM

Tstg

Tj

Repetitive peak reverse current

tp = 2 µs F = 1kHz square

Non repetitive peak reverse current tp = 100 µs square

Repetitive peak avalanche power tp = 1µs Tj = 25°C

Storage temperature range

Maximum operating junction temperature

1

3

10800

- 65 to + 175

175

dV/dt Critical rate of rise of rise voltage

10000

July 2003 - Ed: 6D

Unit

V

A

A

A

A

A

W

°C

°C

V/µs

1/8

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