STPS8H100FP 查看數據表（PDF） - STMicroelectronics

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STPS8H100FP

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS8H100D/F/G/R/FP

Fig. 6-2: Relative variation of thermal impedance

junction to case versus pulse duration

(ISOWATT220AC, TO-220FPAC).

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

Zth(j-c)/Rth(j-c)

1.0

0.8

0.6 δ = 0.5

0.4

δ = 0.2

0.2 δ = 0.1

0.0

1E-3

Single pulse

1E-2

tp(s)

1E-1

T

δ=tp/T

1E+0

tp

1E+1

IR(µA)

5E+3

1E+3

Tj=125°C

1E+2

1E+1

1E+0

1E-1

1E-2

0

Tj=25°C

VR(V)

10 20 30 40 50 60 70 80 90 100

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

C(nF)

1000

500

F=1MHz

Tj=25°C

200

100

1

VR(V)

10

100

Fig. 9: Forward voltage drop versus forward

current (maximum values).

IFM(A)

50.0

10.0

Tj=125°C

Tj=25°C

1.0

0.1

0

VFM(V)

0.2 0.4 0.6 0.8 1

1.2 1.4 1.6

Fig. 10: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board FR4, copper thickness:

35µm)(D2PAK).

Rth(j-a) (°C/W)

80

70

60

50

40

30

20

10

S(Cu) (cm²)

0

0 4 8 12 16 20 24 28 32 36 40

4/8

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