MMBT3906LT1G 查看數據表（PDF） - ON Semiconductor
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MMBT3906LT1G Datasheet PDF : 7 Pages
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+0.5 V
10.6 V
MMBT3906LT1
< 1 ns
10 k
300 ns
DUTY CYCLE = 2%
3V
275
+9.1 V
0
CS < 4 pF*
10 < t1 < 500 ms
t1
DUTY CYCLE = 2%
< 1 ns
10.9 V
10 k
1N916
3V
275
CS < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10
5000
7.0
3000 VCC = 40 V
2000 IC/IB = 10
5.0
Cobo
Cibo
3.0
2.0
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
Figure 3. Capacitance
20 30 40
1000
700
500
300
200
100
70
50
1.0
QT
QA
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
500
300
200
100
70
50
30
20
10
7
5
1.0
IC/IB = 10
tr @ VCC = 3.0 V
15 V
40 V
2.0 V
td @ VOB = 0 V
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turnā-āOn Time
500
300
200
100
70
50
30
20
10
7
5
1.0
IC/IB = 20
VCC = 40 V
IB1 = IB2
IC/IB = 10
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 6. Fall Time
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