HE8051L 查看數據表（PDF） - Unisonic Technologies

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HE8051L

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

Unisonic Technologies 

HE8051

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

Collector Dissipation (Ta=25℃C)

VEBO

6

V

PC

1

W

Collector Current

Junction Temperature

Storage Temperature

IC

1.5

A

TJ

+150

℃

TSTG

-40 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

Current Gain Bandwidth Product

Output Capacitance

SYMBOL

TEST CONDITIONS

BVCBO IC=100µA, IE=0

BVCEO IC=2mA, IB=0

BVEBO IE=100µA, IC=0

ICBO VCB=35V, IE=0

IEBO VEB=6V, IC=0

hFE1 VCE=1V, IC=5mA

hFE2 VCE=1V, IC=100mA

hFE3 VCE=1V, IC=800mA

VCE(SAT) IC=800mA, IB=80mA

VBE(SAT) IC=800mA, IB=80mA

VBE VCE=1V, IC=10mA

fT VCE=10V, IC=50mA

Cob VCB=10V, IE=0, f=1MHz

CLASSIFICATION OF hFE2

RANK

RANGE

C

120-200

D

160-300

MIN TYP MAX UNIT

40

V

25

V

6

V

100 nA

100 nA

45

135

85

160 500

40

110

100

9.0

0.5

V

1.2

V

1.0

V

MHz

pF

E

250-500

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R201-046.B

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