UPC3215TB 查看數據表（PDF） - NEC => Renesas Technology

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UPC3215TB

5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

NEC => Renesas Technology 

µPC3215TB

ABSOLUTE MAXIMUM RATINGS

Parameter

Supply Voltage

Circuit Current

Input Power

Power Dissipation

Operating Ambient Temperature

Storage Temperature

Symbol

VCC

ICC

Pin

PD

TA

Tstg

TA = +25°C

TA = +25°C

TA = +25°C

TA = +85°CNote

Conditions

Ratings

6.0

30

+10

270

–40 to +85

–55 to +150

Unit

V

mA

dBm

mW

°C

°C

Note Mounted on 50 × 50 × 1.6-mm epoxy glass PWB, with copper patterning on both sides.

RECOMMENDED OPERATING CONDITIONS

Parameter

Supply Voltage

Operating Ambient Temperature

Input Power

Input Frequency

Symbol

VCC

TA

Pin

fin

MIN.

4.5

–40

–

0.1

TYP.

5.0

+25

–

–

MAX.

5.5

+85

0

2.9

Unit

V

°C

dBm

GHz

ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω)

Parameter

Circuit Current

Power Gain

Noise Figure

Upper Limit Operating

Frequency

Isolation

Input Return Loss

Output Return Loss

1 dB Compression Point

Symbol

ICC

GP

NF

fu

ISL

RLin

RLout

P-1

Test Conditions

No input signals

f = 1.5 GHz, Pin = –30 dBm

f = 1.5 GHz

3 dB down below from gain at

f = 0.1 GHz

f = 1.5 GHz, Pin = –30 dBm

f = 1.5 GHz, Pin = –30 dBm

f = 1.5 GHz, Pin = –30 dBm

MIN. TYP. MAX. Unit

10.5

14.0

17.5

mA

18.5

20.5

–

dB

–

2.3

3.0

dB

2.5

2.9

–

GHz

39

44

–

dB

10

15

–

dB

6.5

9.5

–

dB

–4

–1.5

–

dBm

STANDARD CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω)

Parameter

Saturated Output Power

Output Intercept Point

Gain Flatness

Symbol

PO(sat)

OIP3

∆GP

Test Conditions

Pin = 0 dBm

f1 = 1.5 GHz, f2 = 1.501 GHz

f = 0.1 to 2.15 GHz

Reference Values

+3.5

+10

1.0

Unit

dBm

dBm

dB

4

Data Sheet P14765EJ2V0DS00

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