1N60P 查看數據表（PDF） - Semtech Electronics LTD.
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1N60P Datasheet PDF : 2 Pages
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1N60P, 1N60S
POINT CONTACT GERMANIUM DIODES
1N60 is a point contact diode employing N-from
Germanium and gives an efficient and excellent
linearity when used in TV image detection, FM
detection, radio, AM detection, etc.
Absolute Maximum Ratings (Ta = 25oC)
Peak Reverse Voltage
Reverse Voltage dc
Peak Forward Current
Average Rectified Output Current
Surge Forward Current
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VRM
45
V
VR
20
V
IFM
150
mA
IO
50
mA
Isurge
500
mA
Tj
75
OC
TS
-55 to +175
OC
Characteristics (1N 60 P)
Symbol Test condition(Ta25±2oC) Min. Typ. Max. Unit
Forward Current
IF VF = 1V
4
-
-
mA
Reverse Current 1N 60P
1N 60S
Junction Capacitance C
Rectification efficiency
IR VR = 10V
IR VR = 10V
- f = 1MHz, V = -1V
n
Vi = 2Vrms, R = 5KΩ
C = 20PF, f = 40MHz
-
-
50
uA
-
-
100 uA
-
-
1
pF
55
-
-
%
Pair △IF<6mA at 1V, △IR<20uA at 10V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/09/2003
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