MCT5200SD 查看數據表（PDF） - Fairchild Semiconductor
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MCT5200SD Datasheet PDF : 11 Pages
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LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
EMITTER
Input Forward Voltage
Forward Voltage Temp.
Coefficient
Reverse Voltage
Junction Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Dark Current
Capacitance Collector to Emitter
Collector to Base
Emitter to Base
Test Conditions
Symbol Device Min Typ** Max Units
(IF = 5 mA)
(IF = 2 mA)
(IR = 10 µA)
(VF = 0 V, f = 1.0 MHz)
VF
All
∆VF
∆TA
All
VR
All
CJ
All
(IC = 1.0 mA, IF = 0)
BVCEO
All
(IC = 10 µA, IF = 0)
BVCBO
All
(IC = 10 µA, IF = 0)
BVEBO
All
(VCE = 10V, IF = 0, RBE = 1MΩ) ICER
All
(VCE = 0, f = 1 MHz)
CCE
All
(VCB = 0, f = 1 MHz)
CCB
All
(VEB = 0, f = 1 MHz)
CEB
All
1.25 1.5
V
-1.75
mV/
°C
6
V
18
pF
30 100
V
30 120
V
5
10
V
1
100 nA
10
pF
80
pF
15
pF
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation
Voltage(10)
Isolation Resistance(10)
Isolation Capacitance(9)
Common Mode Transient
Rejection – Output High
Common Mode Transient
Rejection – Output Low
Test Conditions
Symbol Device Min Typ** Max Units
(f = 60Hz, t = 1 min.)
VI-O = 500 VDC, TA = 25°C
VI-O = 0, f = 1 MHz
VCM = 50 VP-P1, RL= 750Ω, IF = 0
VCM = 50 VP-P, RL= 1KΩ, IF = 0
VCM = 50 VP-P1, RL = 750Ω, IF =1.6mA
VCM = 50 VP-P1, RL= 1KΩ, IF = 5 mA
VISO
RISO
CISO
CMH
CML
All
5300
All
All
MCT5210/11
MCT5200/01
MCT5210/11
MCT5200/01
1011
0.7
5000
5000
Vac(rms)
Ω
pF
V/µs
V/µs
**All typical TA=25°C
© 2003 Fairchild Semiconductor Corporation
Page 2 of 11
6/10/03
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