HUFA75639S3ST_F085A 查看數據表（PDF） - Fairchild Semiconductor
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HUFA75639S3ST_F085A Datasheet PDF : 7 Pages
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HUFA75639S3ST_F085A
Typical Performance Curves (Continued)
1000
100
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
1000
TJ
TC
=
=
MAX RATED
25oC
100
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
VDSS(MAX) = 100V
1ms
10ms
1
1
10
100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
300
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
STARTING TJ = 25oC
STARTING TJ = 150oC
10
0.001
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
100
VGS = 6V
80
VGS = 20V
VGS = 10V
60
VGS = 7V
40
20
0
0
VGS = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
1
2
3
4
5
6
7
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
VDD = 15V
60
175oC
40
20
0
0
25oC
-55oC
1.5
3.0
4.5
6.0
7.5
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
©2012 Fairchild Semiconductor Corporation
HUFA75639S3ST_F085A Rev. C1
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