IRF5801PBF 查看數據表（PDF） - International Rectifier
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IRF5801PBF Datasheet PDF : 8 Pages
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SMPS MOSFET
PD-95474B
IRF5801PbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
ID
2.2W
0.6A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including 9
Effective COSS to Simplify Design, (See
App. Note AN1001)
9!
l Fully Characterized Avalanche Voltage
and Current
B"
l Lead-Free
l Halogen-Free
%9
$9
#T
TSOP-6
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
0.6
0.48
4.8
2.0
0.016
± 30
9.6
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJA
Parameter
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
Max.
62.5
Units
°C/W
1
04/20/10
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