IRF7453PBF 查看數據表（PDF） - International Rectifier
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IRF7453PBF Datasheet PDF : 8 Pages
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IRF7453PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
250
–––
–––
3.0
–––
–––
–––
–––
–––
0.33
–––
–––
–––
–––
–––
–––
–––
–––
0.23
5.5
25
250
100
-100
V
V/°C
Ω
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 1.3A
VDS = VGS, ID = 250µA
VDS = 250V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 150°C
VGS = 24V
VGS = -24V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
1.8 ––– ––– S VDS = 50V, ID = 1.3A
––– 25 38
ID = 1.3A
––– 6.0 9.0 nC VDS = 200V
––– 11 17
VGS = 10V,
––– 9.0 –––
VDD = 125V
––– 2.5 ––– ns ID = 1.3A
––– 19 –––
RG = 6.0Ω
––– 20 –––
VGS = 10V
––– 930 –––
VGS = 0V
––– 130 –––
VDS = 25V
––– 23 ––– pF ƒ = 1.0MHz
––– 1050 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
––– 52 –––
––– 96 –––
VGS = 0V, VDS = 200V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 200V
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
Typ.
–––
–––
Max.
200
2.2
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
98
340
Max.
2.3
17
1.3
150
510
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 1.3A, VGS = 0V
TJ = 25°C, IF = 1.3A
di/dt = 100A/µs
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