IRF9530L 查看數據表（PDF） - Vishay Semiconductors

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IRF9530L

Power MOSFET

Vishay Semiconductors 

IRF9530, SiHF9530

Vishay Siliconix

1800

1500

1200

900

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

Crss = Cgd

Coss = Cds + Cgd

Ciss

600

Coss

300

Crss

0

100

91076_05

101

- VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

101

175 °C

25 °C

100

10-1

1.0

91076_07

VGS = 0 V

2.0

3.0

4.0

5.0

- VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 ID = - 12 A

16

VDS = - 80 V

VDS = - 50 V

12

VDS = - 20 V

8

4

0

0

91076_06

For test circuit

see figure 13

10

20

30

40

50

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

103

5

Operation in this area limited

by RDS(on)

2

102

5

10 µs

2

100 µs

10

1 ms

5

2

1

5

2

0.1

0.1 2

10 ms

TC = 25 °C

TJ = 175 °C

Single Pulse

5 1 2 5 10 2

5 102 2

5 103

91076_08

- VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91076

S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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