IRF9640S(2011) 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

生产厂家

IRF9640S
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L

Vishay Siliconix

12

10

8

6

4

2

0

25

91087_09

50

75

100

125

150

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

10

VDS

VGS

Rg

RD

D.U.T.

- 10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

-

+VDD

Fig. 10a - Switching Time Test Circuit

VGS

10 %

td(on) tr

td(off) tf

90 %

VDS

Fig. 10b - Switching Time Waveforms

1

D = 0.50

0.20

0.1 0.10

0.05

0.02

0.01

10-2

10-5

91087_11

Single Pulse

(Thermal Response)

10-4

10-3

10-2

0.1

t1, Rectangular Pulse Duration (s)

PDM

t1

t2

Notes:

1. Duty Factor, D = t1/t2

2. Peak Tj = PDM x ZthJC + TC

1

10

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

Vary tp to obtain

required IAS

Rg

- 10 V

tp

L

D.U.T

IAS

0.01 Ω

-

+

V

DD

Fig. 12a - Unclamped Inductive Test Circuit

IAS

VDS

VDD

tp

VDS

Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91087

S11-1052-Rev. D, 30-May-11

www.vishay.com

5

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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