AUIRF9952Q 查看數據表（PDF） - International Rectifier
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AUIRF9952Q Datasheet PDF : 13 Pages
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AUIRF9952Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch
P-Ch
30
-30
–––
–––
–––
–––
V VGS = 0V, ID = 250μA
VGS = 0V, ID =-250μA
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
N-Ch
P-Ch
RDS(on)
N-Ch
Static Drain-to-Source On-Resistance
P-Ch
–––
–––
–––
–––
–––
–––
0.015 –––
0.015 –––
0.08 0.10
0.12 0.15
0.165 0.250
0.290 0.400
V/°C Reference to 25°C, ID = 1mA
Ω
Reference to 25°C, ID = -1mA
f VGS = 10V, ID = 2.2A
f VGS = 4.5V, ID = 1.0A
f VGS = -10V, ID = -1.0A
f VGS = -4.5V, ID = -0.5A
VGS(th)
Gate Threshold Voltage
N-Ch 1.0 ––– 3.0
P-Ch -1.0 ––– -3.0
V VDS = VGS, ID = 250μA
VDS = VGS, ID = -250μA
gfs
Forward Transconductance
N-Ch ––– 12 –––
P-Ch ––– 2.4 –––
S VDS = 15V, ID = 3.5A
VDS = -15V, ID = -2.3A
N-Ch ––– ––– 2.0
VDS = 24V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
P-Ch ––– ––– -2.0
N-Ch ––– ––– 25
μA VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
P-Ch ––– ––– -25
VDS = -24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
N-P ––– ––– -100 nA VGS = 20V
Gate-to-Source Reverse Leakage
N-P ––– ––– 100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
N-Ch ––– 6.9 14
N-Channel
P-Ch ––– 6.1 12
ID = 1.8A, VDS = 10V, VGS = 10V
N-Ch ––– 1.0 2.0 nC
f
P-Ch ––– 1.7 3.4
P-Channel
Qgd
Gate-to-Drain ("Miller") Charge
N-Ch ––– 1.8 3.5
N-Ch ––– 1.1 2.2
ID =-2.3A, VDS =-10V, VGS =-10V
td(on)
tr
Turn-On Delay Time
Rise Time
P-Ch ––– 6.2 12
N-Channel
N-Ch ––– 9.7 19
VDD= 10V, ID = 1.0A RG = 6.0Ω
P-Ch ––– 8.8 18
RD = 10Ω
N-Ch ––– 14 28 ns
td(off)
tf
Turn-Off Delay Time
Fall Time
N-Ch ––– 13 26
P-Ch ––– 20 40
N-Ch ––– 3.0 6.0
P-Ch ––– 6.9 14
P-Channel
VDD=-10V, ID =-1.0A RG = 6.0Ω
RD = 10Ω
Ciss
Input Capacitance
Coss
Output Capacitance
N-Ch ––– 190 –––
P-Ch ––– 190 –––
N-Ch ––– 120 –––
P-Ch ––– 110 –––
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
pF
f
P-Channel
Crss
Reverse Transfer Capacitance
N-Ch ––– 61 –––
P-Ch ––– 54 –––
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch ––– ––– 1.7
IS
Continuous Source Current
(Body Diode)
P-Ch ––– ––– -1.3 A
ISM
c Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
N-Ch ––– ––– 16
P-Ch ––– ––– 16
N-Ch ––– 0.82 1.2
P-Ch ––– -0.82 -1.2
e V TJ = 25°C, IS = 1.25A, VGS = 0V
e TJ = 25°C, IS = -1.25A, VGS = 0V
N-Ch ––– 27 53 ns N-Channel
P-Ch ––– 27 54
TJ = 25°C,IF =1.25A, di/dt = 100A/μs
N-Ch ––– 28 57 nC P-Channel
f
P-Ch ––– 31 62
TJ = 25°C,IF =-1.25A, di/dt = 100A/μs
N-P Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A.
(See Figure 12)
P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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