ISP817B(2011) 查看數據表（PDF） - Isocom
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ISP817B Datasheet PDF : 3 Pages
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ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to +125°C
Operating Temperature
-30°C to +100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
80V
6V
50mA
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (VF)
1.2 1.4 V
IF = 20mA
Reverse Current (IR)
10
μA
VR = 4V
Output
Collector-emitter Breakdown (BVCEO) 80
Emitter-collector Breakdown (BVECO) 6
Collector-emitter Dark Current (I )
CEO
V
IC = 1mA
V
IE = 100μA
100 nA V =20V
CE
Coupled
Current Transfer Ratio (CTR) (Note 2)
50
GB
100
BL
200
A
80
B
130
C
200
D
300
Collector-emitter Saturation VoltageVCE (SAT)
600 %
600 %
600 %
160 %
260 %
400 %
600 %
0.2 V
5mA IF , 5V VCE
5mA IF , 5V VCE
5mA IF , 5V VCE
5mA IF , 5V VCE
5mA IF , 5V VCE
5mAI ,5VV
F
CE
5mA IF , 5V VCE
20mA IF , 1mA IC
Input to Output Isolation Voltage VISO 5300
7500
VRMS
PK
See note 1
See note 1
Note 1
Note 2
Input-output Isolation Resistance RISO 5x1010
Output Rise Time tr
4
Output Fall Time tf
3
Ω
VIO= 500V (note 1)
18
μs
V = 2V ,
CE
18
μs
IC = 2mA, RL = 100Ω
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
16/2/11
DB92275
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