PMBFJ309 查看數據表（PDF） - NXP Semiconductors.

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PMBFJ309

N-channel silicon field-effect transistors

NXP Semiconductors. 

PMBFJ308; PMBFJ309;

PMBFJ310

N-channel silicon field-effect transistors

Rev. 4 — 20 September 2011

Product data sheet

1. Product profile

CAUTION

1.1 General description

Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

 Low noise

 Interchangeability of drain and source connections

 High gain.

1.3 Applications

 AM input stage in car radios

 VHF amplifiers

 Oscillators and mixers.

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

VDS

VGSoff

drain-source voltage

gate-source cut-off voltage

PMBFJ308

PMBFJ309

PMBFJ310

Conditions

VDS = 10 V; ID = 1 A

VDS = 10 V; ID = 1 A

VDS = 10 V; ID = 1 A

Min Typ Max Unit

- - 25 V

1 -

1 -

2 -

6.5 V

4 V

6.5 V

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